Silicon Carbide Physical Properties

Technical Parameter	Unit	Reaction Bonded Silicon Carbide SiC	Sintered Silicon Carbide SSiC	Reaction Bonded Silicon Carbide with Graphite SiC+C	Sintered Silicon Carbide with Graphite SSiC+C	Sintered Silicon Carbide with Pore QSSiC+C
Hardness	HS	110	115	≥ 105	≥ 110	≥ 100
Porosity Rate	%	< 0.3	< 0.2	< 0.5	< 0.5	< 5
Density	g/cm³	3.00-3.05	> 3.10	2.69-2.90	2.70-3.0	2.65
Compressive Strength	MPa	> 2200	> 2500	> 1400	> 1600	> 800
Fractural Strength	MPa	> 350	> 380	> 150	> 160	> 100
Coefficient of Heat Expansion	10⁻⁶/°C	4	4.2	3.5	3	2.5
Content of SiC	%	≥ 90	≥ 98	≥ 85	≥ 92	≥ 90
Free Si	%	≤ 10	≤ 1	≤ 12	/	/
Elastic Modulus	GPa	≥ 400	≥ 410	≥ 350	≥ 360	≥ 180
Temperature	°C	1300	1400	1300	1400	1400

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